Increase of planar homogeneity of multi-silicon structures by gettering treatments
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Increase of planar homogeneity of multi-silicon structures by gettering treatments
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| Creator |
Litovchenko, V.G.
Efremov, A.A. Evtukh, A.A. Rassamakin, Yu.V. Klyui, M.I. Kostylov, V.P. |
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| Description |
Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of the samples from recombination active impurities are achieved. Possible mechanisms of the homogenization are briefly discussed.
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| Date |
2017-06-05T16:33:47Z
2017-06-05T16:33:47Z 2001 |
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| Type |
Article
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| Identifier |
Increase of planar homogeneity of multi-silicon structures by gettering treatments / V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 82-84. — Бібліогр.: 1 назв. — англ.
1560-8034 PACS: 61.72.Y; 72.40; 81.05.C; 81.65.T http://dspace.nbuv.gov.ua/handle/123456789/119249 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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