Short-wave photodetectors based on fine grain-sized poly-Si films
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Short-wave photodetectors based on fine grain-sized poly-Si films
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| Creator |
Agaev, F.G.
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| Description |
Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries.
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| Date |
2017-06-05T16:35:15Z
2017-06-05T16:35:15Z 2001 |
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| Type |
Article
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| Identifier |
Short-wave photodetectors based on fine grain-sized poly-Si films / F.G. Agaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 91-92. — Бібліогр.: 5 назв. — англ.
1560-8034 PACS: 85.60.D http://dspace.nbuv.gov.ua/handle/123456789/119251 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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