Influence of neutron irradiation on elctrooptical and structural properties of silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of neutron irradiation on elctrooptical and structural properties of silicon
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| Creator |
Groza, A.A.
Venger, E.F. Varnina, V.I. Holiney, R.Yu. Litovchenko, P.G. Matveeva, L.A. Litovchenko, A.P. Sugakov, V.I. Shmatko, G.G. |
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| Description |
Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the transmission electron microscopy. Influence of the structure defects on electrooptical properties of silicon was revealed.
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| Date |
2017-06-05T17:08:01Z
2017-06-05T17:08:01Z 2001 |
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| Type |
Article
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| Identifier |
Influence of neutron irradiation on elctrooptical and structural properties of silicon / A.A. Groza, E.F. Venger, V.I. Varnina, R.Yu. Holiney, P.G. Litovchenko, L.A. Matveeva, A.P. Litovchenko, M.I. Starchik, V.I. Sugakov, G.G. Shmatko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 152-155. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS: 61.82.F http://dspace.nbuv.gov.ua/handle/123456789/119263 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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