Influence of structural defects on photoconductivity of zinc diphosphide
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of structural defects on photoconductivity of zinc diphosphide
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| Creator |
Kudin, A.P.
Kuts, V.I. Litovchenko, P.G. Pinkovska, M.B. Tartachnyk, V.P. |
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| Description |
Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high temperature treatment (400oC) form band hn = 1.55-2.14 eV. Irradiation leads to the decrease of dark current and appearing of acceptor type level which can be annealed in the temperature interval 20-100⁰C. |
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| Date |
2017-06-05T17:08:56Z
2017-06-05T17:08:56Z 2001 |
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| Type |
Article
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| Identifier |
Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS 61.72 http://dspace.nbuv.gov.ua/handle/123456789/119264 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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