Spectral dependence of the photomagnetic effect in porous silicon
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Spectral dependence of the photomagnetic effect in porous silicon
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Creator |
Vakulenko, O.V.
Kondratenko, S.V. Serdega, B.K. |
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Description |
Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indicates to the drift of the nonequilibrium charge carriers in the c-Si to the PS/c-Si boundary, that is presence of the increased spatial charge layer in c-Si. Relatively high value of the PME in the strong absorption region of the porous silicon indicates to the presence of the PME component caused by porous silicon material.
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Date |
2017-06-05T17:11:07Z
2017-06-05T17:11:07Z 2001 |
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Type |
Article
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Identifier |
Spectral dependence of the photomagnetic effect in porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 159-162. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS: 72.40. http://dspace.nbuv.gov.ua/handle/123456789/119265 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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