Запис Детальніше

Spectral dependence of the photomagnetic effect in porous silicon

Vernadsky National Library of Ukraine

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Поле Співвідношення
 
Title Spectral dependence of the photomagnetic effect in porous silicon
 
Creator Vakulenko, O.V.
Kondratenko, S.V.
Serdega, B.K.
 
Description Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indicates to the drift of the nonequilibrium charge carriers in the c-Si to the PS/c-Si boundary, that is presence of the increased spatial charge layer in c-Si. Relatively high value of the PME in the strong absorption region of the porous silicon indicates to the presence of the PME component caused by porous silicon material.
 
Date 2017-06-05T17:11:07Z
2017-06-05T17:11:07Z
2001
 
Type Article
 
Identifier Spectral dependence of the photomagnetic effect in porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 159-162. — Бібліогр.: 16 назв. — англ.
1560-8034
PACS: 72.40.
http://dspace.nbuv.gov.ua/handle/123456789/119265
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України