About influences of different actions on spectra of impurity photoluminescence in GaAs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
About influences of different actions on spectra of impurity photoluminescence in GaAs
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| Creator |
Litovchenko, N.M.
Prokhorovich, A.V. Strilchuk, O.N. |
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| Description |
Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-brightness characteristics of impurity and inter-impurity bands of luminescence. Correlation changes of luminescence intensities of those bands indicate a variation of radiating centers concentration, if their dependence on excitation level in initial crystals and those subjected to external actions are the same.
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| Date |
2017-06-05T17:12:42Z
2017-06-05T17:12:42Z 2001 |
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| Type |
Article
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| Identifier |
About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS: 71.55.E, 78.55.E http://dspace.nbuv.gov.ua/handle/123456789/119267 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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