Bolometric characteristics of macroporous silicon structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Bolometric characteristics of macroporous silicon structures
|
|
| Creator |
Karachevtseva, L.A.
Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
|
| Description |
Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to a high temperature coefficient of electrical resistance (1-4%), low noise level (2*10⁻⁹ VHz⁻¹/²) and good radiation absorption in the operation spectral region.
|
|
| Date |
2017-06-05T17:16:33Z
2017-06-05T17:16:33Z 2001 |
|
| Type |
Article
|
|
| Identifier |
Bolometric characteristics of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 177-181. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS: 71.25.Rk, 81.60Cp http://dspace.nbuv.gov.ua/handle/123456789/119270 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|