Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact
|
|
| Creator |
Shekhovtsov, L.V.
|
|
| Description |
We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk and near interfaces. An additional unmodulated illumination of the samples during the measurements of the photovoltage spectral curves changes the interaction of photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to put forward models for interaction of photocurrents flowing near the interfaces and obtain the characteristics of the interface uniformity in composite semiconductor structures. |
|
| Date |
2017-06-06T11:07:29Z
2017-06-06T11:07:29Z 2001 |
|
| Type |
Article
|
|
| Identifier |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 253-259. — Бібліогр.: 21 назв. — англ.
1560-8034 PACS: 73.30.+y, 73.40.Kp, 73.50.Pz http://dspace.nbuv.gov.ua/handle/123456789/119315 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|