The impact of laser shock waves on anodic oxide - compound semiconductor interface
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The impact of laser shock waves on anodic oxide - compound semiconductor interface
|
|
| Creator |
Yakovyna, V.S.
Berchenko, N.N. Nikiforov, Yu.N. |
|
| Description |
The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one order of magnitude in annealed AO-MCT based structures, and the annealing time needed to have this layer disappeared decreases as well. The model of LSW impact on the AO-MCT interface is analysed. Remove selected |
|
| Date |
2017-06-06T12:40:35Z
2017-06-06T12:40:35Z 2001 |
|
| Type |
Article
|
|
| Identifier |
The impact of laser shock waves on anodic oxide - compound semiconductor interface / V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 283-286. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS: 62.50.+p, 68.35.Dv http://dspace.nbuv.gov.ua/handle/123456789/119323 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|