Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
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| Creator |
Konakova, R.V.
Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. |
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| Description |
For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-GaAs diode structure parameters after similar microwave treatment.
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| Date |
2017-06-06T13:08:26Z
2017-06-06T13:08:26Z 2001 |
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| Type |
Article
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| Identifier |
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS 61.76.C, 73.40.K, 84.40 http://dspace.nbuv.gov.ua/handle/123456789/119331 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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