Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
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| Creator |
Boltovets, N.S.
Voitsikhovskyi, D.I. Konakova, R.V. Milenin, V.V. Makara, V.A. Rudenko, O.V. Mel’nichenko, M.M. |
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| Description |
Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse current of thermal-generation nature, minority charge carrier lifetime τp in the n-layer and concentration of structural defects (structural perfection of the n⁺-substrate). We advance a model for strained state of multilayer device structures, in particular, those with ohmic and contact layers.
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| Date |
2017-06-06T11:04:26Z
2017-06-06T11:04:26Z 2001 |
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| Type |
Article
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| Identifier |
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them / N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 318-322. — Бібліогр.: 3 назв. — англ.
1560-8034 PACS: 07.07D, 07.57H, 81.05Y, 84.40D http://dspace.nbuv.gov.ua/handle/123456789/119312 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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