Optical approach to analysis of interaction of gallium nitride and weak magnetic fields
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Optical approach to analysis of interaction of gallium nitride and weak magnetic fields
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Creator |
Red'ko, R.A.
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Subject |
Characterization and properties
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Description |
The long-term transformations of optical transmittance of GaN epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 10 min) were obtained. Optical measurements were performed in the waverange of 320-1100 nm at 300 K. The method with three layers simulation was proposed for transmittance spectrum fitting. It was found that the treatment results in not only the optical film thickness changing, but probably in its refractive index too. Non-monotonous changes of the optical thickness, which formed interference, were obtained. Interpretation of the experimental results is based on diffusion of point defects after destruction of the metastable complexes from inner boundaries to surfaces of the studied structures.
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Date |
2017-06-06T14:32:44Z
2017-06-06T14:32:44Z 2015 |
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Type |
Article
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Identifier |
Optical approach to analysis of interaction of gallium nitride and weak magnetic fields / R.A. Red'ko // Functional Materials. — 2015. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 11 назв. — англ.
1027-5495 DOI: http://dx.doi.org/10.15407/fm22.02.188 http://dspace.nbuv.gov.ua/handle/123456789/119350 |
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Language |
en
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Relation |
Functional Materials
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Publisher |
НТК «Інститут монокристалів» НАН України
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