Hereditary functional individuality of semiconductor sensors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Hereditary functional individuality of semiconductor sensors
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| Creator |
Migal, V.P.
But, A.V. Migal, G.V. Klymenko, I.A. |
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| Subject |
Devices and instruments
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| Description |
By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-geometric parameters and indicators of integrative energy balance of photo-induced processes are applied. To analyze the structure of the photosensitivity bands the matrix of balance indicators is proposed.
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| Date |
2017-06-07T11:50:05Z
2017-06-07T11:50:05Z 2015 |
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| Type |
Article
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| Identifier |
Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ.
1027-5495 DOI: http://dx.doi.org/10.15407/fm22.03.387 http://dspace.nbuv.gov.ua/handle/123456789/119556 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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