Influence of g-irradiation on photoluminescence spectra of CdTe:Cl
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of g-irradiation on photoluminescence spectra of CdTe:Cl
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| Creator |
Vakhnyak, N.D.
Krylyuk, S.G. Kryuchenko, Yu.V. Kupchak, I.M. |
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| Description |
Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For larger doses of g-irradiation both a decrease of the total luminescence intensity and the intensity redistribution between the lines of excitons bound to different acceptors occur. For the donor-acceptor recombination with A-centers participation, an increase of the Huang-Rhys factor S is found with D increase. This fact can be explained by decrease of the A-centers concentration. The experimentally determined S values are compared with a calculated S(R) dependence for different distances R between donors and acceptors.
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| Date |
2017-06-07T12:09:21Z
2017-06-07T12:09:21Z 2002 |
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| Type |
Article
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| Identifier |
Influence of g-irradiation on photoluminescence spectra of CdTe:Cl / N.D. Vakhnyak, S.G. Krylyuk, Yu.V. Kryuchenko, I.M. Kupchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 25-30. — Бібліогр.: 31 назв. — англ.
1560-8034 PACS: 78.55.Et; 78.55.-m http://dspace.nbuv.gov.ua/handle/123456789/119561 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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