Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
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| Creator |
Tkach, V.N.
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| Description |
A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate.
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| Date |
2017-06-07T12:24:52Z
2017-06-07T12:24:52Z 2002 |
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| Type |
Article
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| Identifier |
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 61.10.N, 61.66, 68.35.B http://dspace.nbuv.gov.ua/handle/123456789/119563 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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