Interface roughness induced intrasubband scattering in a quantum well under an electric field
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Interface roughness induced intrasubband scattering in a quantum well under an electric field
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| Creator |
Ibragimov, G.B.
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| Description |
Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the interface roughness scattering rates drastically in thick QWs as compared with those for the zero-field case.
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| Date |
2017-06-07T12:25:29Z
2017-06-07T12:25:29Z 2002 |
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| Type |
Article
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| Identifier |
Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS: 68.65,73.20.D http://dspace.nbuv.gov.ua/handle/123456789/119564 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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