Current flow mechanisms in p-i-n structures based on cadmium telluride
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Current flow mechanisms in p-i-n structures based on cadmium telluride
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| Creator |
Gorley, P.M.
Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. |
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| Description |
Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined.
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| Date |
2017-06-07T12:35:03Z
2017-06-07T12:35:03Z 2002 |
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| Type |
Article
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| Identifier |
Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS: 73.40.-c,73.40.Ty http://dspace.nbuv.gov.ua/handle/123456789/119566 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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