Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures
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| Creator |
Tkachuk, A.I.
Tsarenko, O.N. Ryabets, S.I. |
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| Description |
The high-planar epitaxial layers of n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth temperature region 773-873 K by the liquid phase epitaxy technique at a programmatic refrigeration rate of 0.1-0.2 K/min and a temperature reduction range of DT=5-10 K. The laboratory methodology of the production of Cu/δ-layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ /In Schottky barrier structures by thermal vacuum deposition has been developed. The current- and farad-voltage characteristics of these structures have been measured at the 77 K, and the dependence of the diode electro-physical properties on the δ-layer width has been studied.
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| Date |
2017-06-07T12:38:38Z
2017-06-07T12:38:38Z 2002 |
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| Type |
Article
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| Identifier |
Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures / A.I. Tkachuk, O.N. Tsarenko, S.I. Ryabets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 51-57. — Бібліогр.: 20 назв. — англ.
1560-8034 PACS: 73.20.-r, 73.30.+y,73.40.Lq http://dspace.nbuv.gov.ua/handle/123456789/119567 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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