Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
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| Creator |
Kozyrev, A.
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| Subject |
Международная научно-практическая конференция «Нанотехнологии и наноматериалы»
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| Description |
The MgB₂-based samples were synthesized at 2 GPa at 800 and 1050 °C for 1 hour with and without Ti and SiC. X-ray, SEM and Auger structural studies showed that with increasing of manufacturing temperature grain boundary pinning transforms into point pinning, which is well correlated with the transformation of discontinuous oxygen enriched layers into separately located Mg–B–O inclusions in MgB₂. Ti and SiC additions can influence the oxygen and boron distribution, but cannot change the type of pinning at relatively low temperatures.
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| Date |
2017-06-07T16:43:26Z
2017-06-07T16:43:26Z 2014 |
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| Type |
Article
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| Identifier |
Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure / A. Kozyrev // Физика низких температур. — 2014. — Т. 40, № 8. — С. 964-967. — Бібліогр.: 10 назв. — англ.
0132-6414 PACS 74.70.Ad, 74.62.Dh, 74.62.Fj http://dspace.nbuv.gov.ua/handle/123456789/119607 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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