Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals
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| Creator |
Galenin, E.
Biatov, M. Gerasymov, I. Grinyov, B. Sidletskiy, O. Baranov, V. Budagov, J. Davydov, Yu. Glagolev, V. |
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| Subject |
Characterization and properties
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| Description |
A full range of BGSO crystals from BGO to BSO was grown by the Czochralksi method. A set of procedures such as changing of stoichiometry, recrystallization and thermal treatment was applied to improve optical and scintillation parameters of the crystals. The relationships between scintillation yield, energy resolution, decay constants and Si⁴⁺/Ge⁴⁺ ratio in the crystals are discussed with regard to ongoing experiments on high energy physics. Crystal composition with better energy resolution 16.2 % at 662 keV irradiation was obtained.
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| Date |
2017-06-07T18:10:58Z
2017-06-07T18:10:58Z 2015 |
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| Type |
Article
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| Identifier |
Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals / E. Galenin, M. Biatov, I. Gerasymov, B. Grinyov, O. Sidletskiy, V. Baranov, J. Budagov, Yu. Davydov, V. Glagolev // Functional Materials. — 2015. — Т. 22, № 4. — С. 423-428. — Бібліогр.: 20 назв. — англ.
1027-5495 DOI: dx.doi.org/10.15407/fm22.04.423 http://dspace.nbuv.gov.ua/handle/123456789/119614 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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