Efficiency limit for diffusion silicon solar cells at concentrated illumination
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Efficiency limit for diffusion silicon solar cells at concentrated illumination
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| Creator |
Gorban, A.P.
Kostylyov, V.P. Sachenko, A.V. Serba, A.A. |
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| Description |
A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge carriers in heavily doped regions in AM0 conditions was taken into account. It was found that the efficiency of photoconversion η at K ≈ 100 can be as high as 27%.
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| Date |
2017-06-10T07:44:12Z
2017-06-10T07:44:12Z 1999 |
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| Type |
Article
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| Identifier |
Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS 84.60.J, 72.20.J http://dspace.nbuv.gov.ua/handle/123456789/119858 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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