Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers
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| Creator |
Indutnyi, I.Z.
Shepeliavyi, P.E. Indutnyi, V.I. |
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| Description |
Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the remarkable ∆Eg increase (up to 4 times) with decreasing of chalcogenide particle sizes in composite SiO-As₂(S,Se)₃ layers was revealed. The exponential dependence of ∆Eg on storing time at different temperatures has been obtained. An activation energy of the transition of A₂2S₃ nanoparticles structure from a metastable photoexposed state to a ground annealed state is equal to 0.78 ± 0.06 eV. The effects are related to a spatial confinement of a photoexcited carrier diffusion length and an influence of particle sizes on intermediate-range order scale structure relaxation in the chalcogenide nanoparticles.
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| Date |
2017-06-10T07:46:21Z
2017-06-10T07:46:21Z 1999 |
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| Type |
Article
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| Identifier |
Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers / I.Z. Indutnyi, P.E. Shepeliavyi, V.I. Indutnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 59-62. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS 78.66J,F, 81.15, 78.40.P, 73.61.J, 73.50.M http://dspace.nbuv.gov.ua/handle/123456789/119861 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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