Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes
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| Creator |
Ivasiv, Z.F.
Sizov, F.F. Tetyorkin, V.V. |
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| Description |
The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at low reverse biases U≤0.1 V. In the photodiodes, where the tunneling current is found to be dominating, the 1/f noise is observed up to frequencies 10⁴ Hz. The decrease of tunneling current results in the decrease of 1/f noise.
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| Date |
2017-06-10T08:11:18Z
2017-06-10T08:11:18Z 1999 |
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| Type |
Article
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| Identifier |
Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes / Z.F. Ivasiv, F.F. Sizov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 21-25. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS: 85.60.D, 07.57.K, 85.60.G, 73.40 http://dspace.nbuv.gov.ua/handle/123456789/119879 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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