Effect of emitter proprties on the conversion efficiency of silicon solar cells
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of emitter proprties on the conversion efficiency of silicon solar cells
|
|
| Creator |
Gorban, A.P.
Kostylyov, V.P. Sachenko, A.V. |
|
| Description |
The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is performed in the approximation when in the region with changing concentration a small part of generated electron-hole pairs recombines. It is shown that, in general, the correlation between h and p-n - junction depth is absent.
|
|
| Date |
2017-06-10T08:06:29Z
2017-06-10T08:06:29Z 1999 |
|
| Type |
Article
|
|
| Identifier |
Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 84.60.J, 72.20.J http://dspace.nbuv.gov.ua/handle/123456789/119874 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|