Conversion efficiency in silicon solar cells with spatially non-uniform doping
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Conversion efficiency in silicon solar cells with spatially non-uniform doping
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| Creator |
Sachenko, A.V.
Prima, N.A. Gorban, A.P. |
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| Description |
The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown that at high under-contact doping levels and at relatively low inter-contact doping ones the conversion efficiency increases as compared to uniform doping case. The dependence of η on Shockley-Reed-Hall carrier lifetimes both in the base and in the top-surface n⁺-layer as well as on the depth of p-n-junction and the shape of electron concentration profile, N(x), in the n⁺-region is analysed.
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| Date |
2017-06-10T08:05:41Z
2017-06-10T08:05:41Z 1999 |
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| Type |
Article
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| Identifier |
Conversion efficiency in silicon solar cells with spatially non-uniform doping / A.V. Sachenko, N.A. Prima, A.P. Gorban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 32-37. — Бібліогр.: 15 назв. — англ.
1560-8034 Pacs: 84.60.J; 72.20.J http://dspace.nbuv.gov.ua/handle/123456789/119872 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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