Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
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| Creator |
Venger, E.F.
Beliaev, A.A. Boltovets, N.S. Ermolovich, I.B. Ivanov, V.N. Konakova, R.V. Milenin, V.V. Voitsikhovski, D.I. Figielski, T. Makosa, A. |
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| Description |
The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results in creating the ELS type center in the space charge region of GaAs. This center is represented by the complex VGa+VAs, which has been confirmed by photoluminescence measurements. It causes the appearance of excess current at the initial part of current-voltage characteristic.
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| Date |
2017-06-10T08:01:34Z
2017-06-10T08:01:34Z 1999 |
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| Type |
Article
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| Identifier |
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS: 73.30; 85.30.H, K http://dspace.nbuv.gov.ua/handle/123456789/119864 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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