Interactions Between Phases and Degradation Mechanisms in Metal-InP and Metal-GaAs Structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Interactions Between Phases and Degradation Mechanisms in Metal-InP and Metal-GaAs Structures
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| Creator |
Venger, E.F.
Konakova, R.V. Korotchenkov, G.S. Milenin, V.V. Russu, E.V. Prokopenko, I.V. |
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| Subject |
Review of a monographs
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| Description |
In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered.
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| Date |
2017-06-10T08:10:45Z
2017-06-10T08:10:45Z 1999 |
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| Type |
Article
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| Identifier |
Interactions Between Phases and Degradation Mechanisms in Metal-InP and Metal-GaAs Structures / E.F. Venger, R.V. Konakova, G.S. Korotchenkov, V.V. Milenin, E.V. Russu I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ.
1560-8034 http://dspace.nbuv.gov.ua/handle/123456789/119878 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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