Theory of high-field electron transport in the heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with delta-doped barriers. Effect of real-space transfer
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Theory of high-field electron transport in the heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with delta-doped barriers. Effect of real-space transfer
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| Creator |
Korotyeyev, V.V.
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| Description |
Steady-state electric characteristics of quantum heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with -doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels are formed in the barrier layers. Current-voltage characteristics of the structure were obtained in the wide interval of applied electric fields up to several kV/cm being based on the solution of Boltzmann transport equation. It has been found that in the electric fields higher than 1 kV/cm the effect of exchange of the carriers between the high-conductive channel of the GaAs quantum well and the channels in the AlGaAs barriers becomes essential. This effect gives rise to the appearance of the strongly nonlinear current-voltage characteristics with a portion of negative differential conductivity. The developed model of heterostructure is adequate to those recently fabricated and studied by Prof. Sarbey’s group. The obtained results explain some observation of this paper. It has been found that the effect of electron real-space transfer takes place at both low temperatures and room temperatures, which opens perspectives to design novel type nanostructured current controlled devices
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| Date |
2017-06-10T11:39:09Z
2017-06-10T11:39:09Z 2015 |
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| Type |
Article
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| Identifier |
Theory of high-field electron transport in the heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with delta-doped barriers. Effect of real-space transfer / V.V. Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 1-11. — Бібліогр.: 31 назв. — англ.
1560-8034 PACS 72.20.Ht, 72.20.Dp, 73.23.-b, 85.35.-p http://dspace.nbuv.gov.ua/handle/123456789/119925 DOI: 10.15407/spqeo18.01.001 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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