The increase of crystal growing rate without damaging the smoothness of interface border
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The increase of crystal growing rate without damaging the smoothness of interface border
|
|
| Creator |
Kanishchev, V.N.
|
|
| Subject |
Technology
|
|
| Description |
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one.
|
|
| Date |
2017-06-10T11:08:09Z
2017-06-10T11:08:09Z 2013 |
|
| Type |
Article
|
|
| Identifier |
The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ.
1027-5495 DOI: dx.doi.org/10.15407/fm20.01.123 http://dspace.nbuv.gov.ua/handle/123456789/119910 |
|
| Language |
en
|
|
| Relation |
Functional Materials
|
|
| Publisher |
НТК «Інститут монокристалів» НАН України
|
|