Photovoltaic effect in p–SiC/p–Si heterojunction
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photovoltaic effect in p–SiC/p–Si heterojunction
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| Creator |
Kozlovskyi, A.A.
Semenov, A.V. Puzikov, V.M. |
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| Subject |
Characterization and properties
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| Description |
The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction.
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| Date |
2017-06-11T05:26:35Z
2017-06-11T05:26:35Z 2013 |
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| Type |
Article
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| Identifier |
Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ.
1027-5495 DOI: dx.doi.org/10.15407/fm20.02.217 http://dspace.nbuv.gov.ua/handle/123456789/120066 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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