Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes
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| Creator |
Kosyachenko, L.A.
Rarenko, I.M. Bodnaruk, O.O. Frasunyak, V.M. Sklyarchuk, V.M. Sklyarchuk, Ye.F. Sun Weiguo Lu Zheng Xiong |
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| Description |
The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes.
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| Date |
2017-06-11T14:06:34Z
2017-06-11T14:06:34Z 1999 |
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| Type |
Article
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| Identifier |
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS: 71.28, 72.20.J, 78.40.F, 78.66 http://dspace.nbuv.gov.ua/handle/123456789/120253 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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