Evaluation of the efficiency of interband radiative recombination in high quality Si
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Evaluation of the efficiency of interband radiative recombination in high quality Si
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| Creator |
Sachenko, A.V.
Kryuchenko, Yu.V. |
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| Description |
It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wavelength of exciting monochromatic light, surface recombination rate and thickness of silicon plate are discussed.
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| Date |
2017-06-11T13:39:42Z
2017-06-11T13:39:42Z 1999 |
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| Type |
Article
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| Identifier |
Evaluation of the efficiency of interband radiative recombination in high quality Si / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 55-60. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS 72.20.J, 78.55, 78.60 http://dspace.nbuv.gov.ua/handle/123456789/120242 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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