Chemical dissolution of indium arsenide in the Br₂-HBr solutions
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Chemical dissolution of indium arsenide in the Br₂-HBr solutions
|
|
| Creator |
Tomashik, Z.F.
Danylenko, S.G. Tomashik, V.N. Kravetski, M.Yu. |
|
| Description |
The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be used to chemically polish InAs. Solutions containing from 20 to 30 vol.% Br₂ in HBr dissolve InAs with the rate 25 to 50 µ/min forming polished surfaces with etch pits. Such solutions may be used to chemically cut indium arsenide.
|
|
| Date |
2017-06-11T14:07:54Z
2017-06-11T14:07:54Z 1999 |
|
| Type |
Article
|
|
| Identifier |
Chemical dissolution of indium arsenide in the Br₂-HBr solutions / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik, M.Yu. Kravetski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 73-75. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 81,65 C. http://dspace.nbuv.gov.ua/handle/123456789/120255 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|