Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties
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| Creator |
Atroshchenko, L.V.
Galkin, S.N. Galchinetskii, L.P. Lalayants, A.I. Rybalka, I.A. Ryzhikov, V.D. Silin, V.I. Starzhinskii, N.G. |
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| Description |
Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown both from the raw material which had been pre-synthesized in quartz ampoules and from the raw material synthesized from the elements directly in the growth furnace. It is shown that the best values of electric resistivity ρ (up to 10¹¹ Ohm⋅cm) and sensitivity to X-ray and gamma-radiation are obtained for crystals grown in crucibles of highly pure coal-graphite material from the pre-synthesized raw charge. Correlation has been established between values of ρ and crystal defectness: decrease of dislocation density by 10⁴ times led to 10⁷ times higher values of resistivity. Concentration of dislocation etching pits regularly decreased with higher purity of the raw material and optimization of crystal preparation technology. |
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| Date |
2017-06-11T14:10:36Z
2017-06-11T14:10:36Z 1999 |
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| Type |
Article
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| Identifier |
Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties / L.V. Atroshchenko, S.N. Galkin, L.P. Gal’chinetskii, A.I. Lalayants, I.A. Rybalka, V.D. Ryzhikov, V.I. Silin, N.G. Starzhinskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 81-85. — Бібліогр.: 5 назв. — англ.
1560-8034 PACS: 72.20, 78.30.A, F, 81.05.C, D, E, G, H http://dspace.nbuv.gov.ua/handle/123456789/120259 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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