Exciton-enhanced recombination in silicon at high concentrations of charge carriers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Exciton-enhanced recombination in silicon at high concentrations of charge carriers
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| Creator |
Sachenko, A.V.
Gorban, A.P. Kostylyov, V.P. |
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| Description |
The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation at high concentrations of non-equilibrium or equilibrium charge carriers. In n-type material a correlation between Shockley-Reed-Hall lifetime values and a square-law recombination coefficient is found. This correlation is explained in terms of assumption that both Shockley-Reed-Hall lifetime, and non-radiative exciton annihilation time constant responsible for a square-law recombination, are determined by the same deep level. It is stated, that the mentioned regularities should essentially affect the bulk lifetime values in n-type silicon at doping concentration exceeding 10¹⁶ cm⁻³.
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| Date |
2017-06-11T13:10:03Z
2017-06-11T13:10:03Z 2000 |
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| Type |
Article
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| Identifier |
Exciton-enhanced recombination in silicon at high concentrations of charge carriers / A.V. Sachenko, A.P. Gorban, V.P. Kostylyov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 5-10. — Бібліогр.: 28 назв. — англ.
1560-8034 PACS: 72.20. J; 78.60. J http://dspace.nbuv.gov.ua/handle/123456789/120224 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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