Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
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| Creator |
Neimash, V.B.
Puzenko, O.O. Kraitchinskii, A.M. Krasko, M.M. Putselyk, S. Claeys, C. Simoen, E. |
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| Description |
Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion.
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| Date |
2017-06-11T13:11:43Z
2017-06-11T13:11:43Z 2000 |
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| Type |
Article
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| Identifier |
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS: 61.72.T, C, 66.30.L, 72.80.C, 73.61.C http://dspace.nbuv.gov.ua/handle/123456789/120226 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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