Ultrasound effect on radiation damages in boron implanted silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Ultrasound effect on radiation damages in boron implanted silicon
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| Creator |
Romanjuk, B.
Krüger, D. Melnik, V. Popov, V. Olikh, Ya. Soroka, V. Oberemok, O. |
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| Description |
The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.
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| Date |
2017-06-11T13:12:33Z
2017-06-11T13:12:33Z 2000 |
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| Type |
Article
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| Identifier |
Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS 61.72T; 66.30L; 61.72 http://dspace.nbuv.gov.ua/handle/123456789/120227 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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