Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
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| Creator |
Selishchev, P.A.
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| Description |
Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å .
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| Date |
2017-06-11T13:17:47Z
2017-06-11T13:17:47Z 2000 |
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| Type |
Article
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| Identifier |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS: 36.40. M, 61.66, 61.72. T, 68.65 http://dspace.nbuv.gov.ua/handle/123456789/120230 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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