Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
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| Creator |
Dmitruk, N.L.
Borkovskaya, O.Yu. Kostylyov, V.E. Sachenko, A.V. Sokolovskiy, I.O. |
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| Description |
We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit current in the above solar cells (SC) was performed. In particular, the low-energy spectral region (where absorption is weak) was considered. A comparison was made between the experimental and theoretical photocurrent spectral curves. From it, we determined a number of parameters of the AlxGa1–xAs and GaAs р-layers, as well as of the n-GaAs layers. Some recommendations concerning the ways to increase photocurrent and extend photosensitivity spectral region were developed for technologists. A theoretical analysis of a “spotty” model for open-circuit voltage formation in relief AlxGa₁₋xAs–p-GaAs–n-GaAs-based SC was made. This model enables one to give a qualitative explanation for decrease of open-circuit voltage in relief SC as compared to the case of flat interface.
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| Date |
2017-06-12T14:42:11Z
2017-06-12T14:42:11Z 2005 |
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| Type |
Article
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| Identifier |
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces / N.L. Dmitruk, O.Yu. Borkovskaya, V.E. Kostylyov, A.V. Sachenko, I.O. Sokolovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 72-78. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS: 73.40.-c, 84.60.It http://dspace.nbuv.gov.ua/handle/123456789/120642 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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