Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
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| Creator |
Karimov, A.V.
Yodgorova, D.M. |
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| Description |
Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different in their efficiency under the used level of the illumination intensity.
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| Date |
2017-06-12T14:42:44Z
2017-06-12T14:42:44Z 2005 |
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| Type |
Article
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| Identifier |
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction / A.V. Karimov, D.M. Yodgorova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 79-82. — Бібліогр.: 5 назв. — англ.
1560-8034 PACS: 84.60. Jt http://dspace.nbuv.gov.ua/handle/123456789/120643 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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