Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions
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| Creator |
Hodovaniouk, V.M.
Doktorovych, I.V. Butenko, V.K. Yuryev, V.H. Dobrovolsky, Yu.G. |
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| Description |
The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant-flux characteristic under background radiation and the preamplifier output signal dependence on the background current and intrinsic resistance are investigated. It is shown that the change of the PD parameters under background radiation is similar to the influence of the PD equivalents – equivalents of capacitance and resistance.
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| Date |
2017-06-12T14:43:44Z
2017-06-12T14:43:44Z 2005 |
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| Type |
Article
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| Identifier |
Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ.
1560-8034 PACS: 85.60 Dw http://dspace.nbuv.gov.ua/handle/123456789/120644 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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