InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures
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| Creator |
Masselink, W.T.
Kissel, H. Mueller, U. Walther, C. Mazur, Yu.I. Tarasov, G.G. Lisitsa, M.P. Lavoric, S.R. Zhuchenko, Z.Ya. |
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| Description |
Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures are studied. The size distribution of InAs quantum dots (QD's) is found to be bimodal at the higher substrate growth temperature (TG = 505 °C) and is transformed into multimodal for the decreased growth temperature (TG = 420 °C) and growth interruption applied. For the first time we demonstrate the strong coupling between modes, which stabilizes the PL magnitude and the full width at half maximum of large index QD modes within a certain temperature interval (50-150 K) due to feeding of the radiative transitions from non-radiative decay and carrier transfer arising from decaying excitonic states of the low index QD mode.
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| Date |
2017-06-12T08:38:07Z
2017-06-12T08:38:07Z 2000 |
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| Type |
Article
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| Identifier |
InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures / W.T. Masselink, H. Kissel, U. Mueller, C. Walther, Yu.I. Mazur, G.G. Tarasov, M.P. Lisitsa, S.R. Lavoric, Z.Ya. Zhuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 121-125. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS: 78.55.Cr,78.20.Ls,73.40.Kp http://dspace.nbuv.gov.ua/handle/123456789/120508 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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