Photoresponse of Schottky-barrier detector under strong IR laser excitation
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoresponse of Schottky-barrier detector under strong IR laser excitation
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| Creator |
Asmontas, S.
Seliuta, D. Sirmulis, E. |
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| Description |
Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower than Schottky barrier height. In this case the photovoltage as a function of light intensity follows a power-law dependence with the power greater than unity (2...6). The results are interpreted from the viewpoint of electron emission over the potential barrier due to multiphoton or multistep light absorption at the metal-semiconductor interface.
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| Date |
2017-06-12T08:39:17Z
2017-06-12T08:39:17Z 2000 |
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| Type |
Article
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| Identifier |
Photoresponse of Schottky-barrier detector under strong IR laser excitation / S. Asmontas, D. Seliuta, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 138-143. — Бібліогр.: 18 назв. — англ.
1560-8034 PACS: 73.30.+ y, 73.40.Ns, 73.50.Cr, P http://dspace.nbuv.gov.ua/handle/123456789/120510 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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