Запис Детальніше

Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals

Vernadsky National Library of Ukraine

Переглянути архів Інформація
 
 
Поле Співвідношення
 
Title Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals
 
Creator Maksimchuk, P.O.
Seminko, V.V.
Bespalova, I.I.
Masalov, A.A.
 
Subject Characterization and properties
 
Description In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom of 4f⁰ band leads to sufficient modification of O2p-Ce4f excitation relaxation processes due to excitation retrapping. Strong dependence of TSL signal on the stoichiometry of nanocrystal allows to suppose that electronic defects are associated with oxygen vacancies and are formed by F⁺ centers.
 
Date 2017-06-12T07:26:26Z
2017-06-12T07:26:26Z
2014
 
Type Article
 
Identifier Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ.
1027-5495
DOI: dx.doi.org/10.15407/fm21.02.152
http://dspace.nbuv.gov.ua/handle/123456789/120408
 
Language en
 
Relation Functional Materials
 
Publisher НТК «Інститут монокристалів» НАН України