Formation and evolution of intermixing zones in C/Si multilayer under heating
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Formation and evolution of intermixing zones in C/Si multilayer under heating
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| Creator |
Zhuravel, I.A.
Bugayev, Ye.A. Penkov, A.V. Zubarev, E.N. Sevryukova, V.A. Kondratenko, V.V. |
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| Subject |
Characterization and properties
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| Description |
Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C.
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| Date |
2017-06-12T07:55:05Z
2017-06-12T07:55:05Z 2014 |
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| Type |
Article
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| Identifier |
Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/120462 DOI: dx.doi.org/10.15407/fm21.03.318 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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