Active region of CdTe X-/γ-ray detector with Schottky diode
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Active region of CdTe X-/γ-ray detector with Schottky diode
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| Creator |
Kosyachenko, L.A.
Maslyanchuk, O.L. |
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| Description |
It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics become standard. To achieve semi-insulating conductivity in CdTe, it is impossible to widen considerably the depleted layer in the diode. Therefore, the region of the high electric field is only a small part of the substrate thickness. Too small capacitance value and its weak dependence on the bias voltage observed in the Schottky diode made of semi-insulating CdTe are a result of the effect of the substrate resistance and the wide space charge region in the diode.
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| Date |
2017-06-12T15:36:46Z
2017-06-12T15:36:46Z 2005 |
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| Type |
Article
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| Identifier |
Active region of CdTe X-/γ-ray detector with Schottky diode / L.A. Kosyachenko, O.L. Maslyanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 45-50. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS: 71.55.Gs; 72.80.Ey; 73.30.+y http://dspace.nbuv.gov.ua/handle/123456789/120653 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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