Nonlinear-optical processes at streamer discharge in semiconductors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Nonlinear-optical processes at streamer discharge in semiconductors
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| Creator |
Rusakov, K.I.
Parashchuk, V.V. |
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| Description |
The possibility of light auto-channelling (self-trapping) in conditions of streamer discharge in hexagonal and cubic semiconductors was shown. It is considered the mechanism of discharge in the wide-gap compounds on the basis of representation about the light auto-channelling at streamer excitation, providing their high propagation velocity down to ~5∙10⁹ cm/s, the crystallographic orientation (directionality), filamentary character at thickness of the channel about 1 μm and absence of the catastrophic destructions of a crystal.
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| Date |
2017-06-12T18:01:38Z
2017-06-12T18:01:38Z 2015 |
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| Type |
Article
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| Identifier |
Nonlinear-optical processes at streamer discharge in semiconductors / K.I. Rusakov, V.V. Parashchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 36-39. — Бібліогр.: 13 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.01.036 PACS 42.65.-k, 52.80.-s http://dspace.nbuv.gov.ua/handle/123456789/120724 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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