Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
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| Creator |
Golenkov, A.G.
Zhuravlev, K.S. Gumenjuk-Sichevska, J.V. Lysiuk, I.O. Sizov, F.F. |
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| Description |
Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-μm technology) can reach NEPopt ≈ 6•10⁻¹² W/Hz¹/² , and it is 3-fold lower than that for Si MOSFET (in 0.35-μm technology).
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| Date |
2017-06-12T15:14:02Z
2017-06-12T15:14:02Z 2015 |
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| Type |
Article
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| Identifier |
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.01.040 PACS 07.57.Kp, 73.40.-c, 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/120648 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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