Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Changes in electrophysical properties of heavily doped n-Ge single crystals under the influence of thermoannealings
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| Creator |
Gaidar, G.P.
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| Description |
Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤T≤ 900 °C), have been investigated and explained.
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| Date |
2017-06-12T18:05:39Z
2017-06-12T18:05:39Z 2015 |
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| Type |
Article
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| Identifier |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 53-56. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 61.82.Fk http://dspace.nbuv.gov.ua/handle/123456789/120727 DOI: 10.15407/spqeo18.01.053 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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