Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
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| Creator |
Red’ko, S.M.
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| Description |
The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed.
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| Date |
2017-06-12T17:54:45Z
2017-06-12T17:54:45Z 2015 |
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| Type |
Article
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| Identifier |
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.01.071 PACS 78.55.Cr, 71.55.Eq http://dspace.nbuv.gov.ua/handle/123456789/120722 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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